magnetic domain wall meaning in English
磁畴壁
Examples
- It indicates that these materials are optimum cadidate for application . the magnetostriction of terfenol - d was calculated based on the model of magnetic domain turning and the model of magnetic domain wall motion respectively . the experiment value is consistent with that of calculation in low magnetic fields
应用磁畴转动模型和畴壁位移模型计算了terfenol - d的磁致伸缩，计算结果表明在低磁场下，应用畴壁位移模型得到的计算结果与实验结果符合较好。 - In general , polycrystal or twin magnetostrictive materials are used as the drive unit in micro - displacement actuator . however , the displacement output of the actuator under low magnetic field is small and its precision is limited , as a result of motion restriction of magnetic domain walls by grain boundaries in polycrystal or twin magnetostrictve materials
磁致伸缩是一种磁?机械耦合现象，以tb - dy - fe为代表的稀土超磁致伸缩材料，其伸缩量为普通压电陶瓷的30 - 50倍，响应时间低于10 . 6秒，是理想的位移致动材料。 - According to the minimum principle in energy , we analyze the microcosmic mechanism of magnetic domain construction and the main factor that affect the shape , size and connecting of the magnetic domain etc . from the microcosmic mechanism of ferromagnet , we analyze how stress influence the magnetic domain and magnetic domain wall , and discover the increase of stress energy and magnetism elasticity energy which destroy the balance of system energy make up the influence of magnetic domain structure , then set up basic disciplinarian between stress and characteristic of magnetism
同时根据能量最小原理，从理论上分析了磁畴结构存在的微观机理以及影响磁畴结构运动、变化的主要因素，得出了应力的存在将影响磁畴的形状、大小和搭配方式等结论。从铁磁晶体的微观机理出发，研究了应力对磁畴和磁畴壁的影响，发现应力影响磁畴结构的本质是由于应力的作用使得铁磁晶体增加了应力能和磁弹性能，体系为了达到新的平衡，导致了磁畴结构变化，并研究了应力与铁磁晶体磁特性之间的基本规律。 - The ultra high density bloch line memory ( blm ) scheme was proposed bykonish in 1983 . negative vertical bloch line ( vbl ) pairs in the walls of stripe domains aligned in parallel ( minor loops ) are used as information carries in blm . so , the study of the temperature stability of the vbl in the magnetic domain of garnet bubble is very important to the study of blm and the development of magnetic domain wall physics
并通过j . c . slonczewski所给出的vbl的平衡间距公式分析得出d畴壁中vbl间的平衡间距( s _ ( eq ) )随温度的升高而增大，这与以前人们所得到的ohb畴壁中vbl间平衡间距( s _ ( eq ) )随温度的升高而减小的结论不一致，并对此进行了分析。